Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells

I. Lapushkin; A. Zakharova; S. T. Yen; K. A. Chao

doi:10.1117/12.562646

28 May 2004 Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells

I. Lapushkin, A. Zakharova, S. T. Yen, K. A. Chao

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562646
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

We investigate the subband dispersions in the InAs/GaSb quantum wells using Burt's envelope function theory and the scattering matrix method. The potential and carrier distributions as well as the level positions are derived by means of self-consistently solving the Schroedinger and the Poisson equations. The semimetal-semiconductor phase transitions have been obtained with the GaSb layer thickness decreasing and with increase of the bias voltage applied across the structure.

Citation Download Citation

I. Lapushkin, A. Zakharova, S. T. Yen, and K. A. Chao "Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562646

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