28 May 2004 Features of electroforming in open sandwich-structures Si-SiO2-W for silicon of different types of conductivity
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557444
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
The results of experiments on research of electroforming processes in open “sandwich”-structures Si-SiO2-W (silicon - silicon dioxide - tungsten) with thickness of silicon dioxide about 20 nm are shown. The basic distinction for silicon of p- and n-types conductivity is marked: in the first case usual for electroforming N-type current-voltage characteristic and in the second S-type curve typical for electric breakdown with thermal instability are observed. The mechanisms of processes are discussed. The marked distinction is connected with the fact that in structures n-Si-SiO2-W the current is transported basically by electrons which dissociative attachment to molecules on a surface of an insulating slit leads to their destruction and conductive phase particles formation from them. In a current through structures p-Si-SiO2-W the electrons prevail only at initial moments of electroforming, in process of conductive medium accumulation their share falls by one - two orders, and the current is transported by holes, which cannot participate during formation of conductive phase particles.
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Victor M. Mordvintsev, Sergey E. Kudrjavtsev, Valeriy L. Levin, "Features of electroforming in open sandwich-structures Si-SiO2-W for silicon of different types of conductivity", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557444; https://doi.org/10.1117/12.557444

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