Gamma radiation tolerance of 0.5-µm SOI MOSFETs

Olga V. Naumova; A. A. Frantsuzov; Vladimir P. Popov

doi:10.1117/12.558405

28 May 2004 Gamma radiation tolerance of 0.5-μm SOI MOSFETs

Olga V. Naumova, A. A. Frantsuzov, Vladimir P. Popov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558405
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

We investigated the gamma radiation tolerance of a 0.5 μm SOI technology on Dele-Cut material. The radiation response was characterized by threshold-voltage shift of the front-gate and back-gate transistors. Results are compared with the radiation response of SOI MOSFETs on Unibond and SIMOX materials. Negligible degradation of subthreshold swing of back-gate n- and p-channel MOSFETs was observed, indicating that the primary effect of radiation is the introduction of charge in the buried oxide. The charge accumulation in the buried oxide was compared with MOSFETs fabricated in different SOI wafers. Buried oxide of Dele-Cut MOSFETs demonstrates the more pronounce γ-radiation tolerance in comparison with Unibond and SIMOX MOSFETs.

Citation Download Citation

Olga V. Naumova, A. A. Frantsuzov, and Vladimir P. Popov "Gamma radiation tolerance of 0.5-μm SOI MOSFETs", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558405

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