28 May 2004 Influence of cells-MOSFETs (with Schottky barrier drain contact) location in power IC on electrical device characteristics
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558410
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
This paper presents a two-dimensional numerical analysis of planar power n-channel MOSFET structure with Schottky-barrier drain contact. A comparison in I-V characteristics between the Lateral Power MOSFET with Schottky-barrier drain contact and the conventional Lateral Power MOSFET with ohmic drain contact structures is given. The thyristor like I-V characteristics of the Lateral Power MOSFET with Schottky-barrier drain contact are found to be dependent of substrate contact location and neighboring cells interaction.
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M. Korolev, M. Korolev, Anton Krasukov, Anton Krasukov, R. Tihonov, R. Tihonov, } "Influence of cells-MOSFETs (with Schottky barrier drain contact) location in power IC on electrical device characteristics", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558410; https://doi.org/10.1117/12.558410
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