28 May 2004 Investigation of a nucleation stage of macropore formation in p-type silicon
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557921
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
In the present paper the peculiarities of nucleation stage of deep anodic etching of silicon are studied. The dependence of the depth of etching crater obtained for silicon samples of p-type conduction with different resistivity upon the regimes of anodic etching processes has been determined. On the basis of the experimental results obtained the “bottleneck” effect observed both at the first and second stages of pore growth is explained.
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V. V. Starkov, Eugene Yu. Gavrilin, Anatoli F. Vyatkin, "Investigation of a nucleation stage of macropore formation in p-type silicon", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557921; https://doi.org/10.1117/12.557921
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