Investigation of dissolution process of implanted silicon dioxide

Niaz I. Nurgazizov; Anastas A. Bukharaev; Roza M. Aminova; Denis V. Ovchinnikov

doi:10.1117/12.557439

28 May 2004 Investigation of dissolution process of implanted silicon dioxide

Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M. Aminova, Denis V. Ovchinnikov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557439
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

This work contains the results of the investigation of dissolution of SiO₂ after the implantation by Ar⁺ and C⁺ ions with the irradiation energy of several tens of keV. The measurements were carried out directly in the liquid in-situ with an atomic force microscope. The quantitative data about the distribution of the etching rate on the depth of the implanted layer were obtained. The change of the dissolution rate of SiO₂ after implantation is due to with the change of the internal structure of the material. The results of the quantum-mechanical calculations of the internal structure of SiO₂ before and after implantation are given.

Citation Download Citation

Niaz I. Nurgazizov, Anastas A. Bukharaev, Roza M. Aminova, and Denis V. Ovchinnikov "Investigation of dissolution process of implanted silicon dioxide", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557439

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