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28 May 2004 Investigation of influence of low-energy ion beam parameters on Reactive Ion Beam Synthesis (RIBS) of thin films
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004)
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Method of Reactive Ion Beam Synthesis of thin films was developed. The phenomenological model of synthesis is founded on consideration main components of ion beam plasma (IBP) in space of the ion beam transportation and phenomenon occurring on treatment surface under the action of ion beam is submitted. Processes of deposition metal and dielectric films from ion beam, neutralization of positive potential on a surface Us of dielectric are considered. The value of surface potential is established, it is calculated a part of reflected low energy ions and influence of Us on Langmuir gap is determined. The size of Langmuir gap dL depends, according to equation of Child-Langmuir from density of an ion current on a substrate j and potential difference between plasma and substrate U. The theoretical calculations have showed that flow of ion beam and neutral particles on treatment surface are close on order of the value. Division of an ion and neutral component of ion beam plasma in a magnetic field and the subsequent independent deposition of a thin film from the divided ion and neutral streams has shown that growing of the film is conditioned by introduction accelerated ion in subsurface layer of the film or substrate.
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Yuri P. Maishev and S. L. Shevchuk "Investigation of influence of low-energy ion beam parameters on Reactive Ion Beam Synthesis (RIBS) of thin films", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004);


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