28 May 2004 Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557275
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Investigation of the dynamics of recrystallization and anisotropic local melting of implanted silicon under irradiation by pulses of incoherent light with different duration and power densities has been carried out. Dynamics of recrystallization of implanted silicon surface has been investigated in situ using a diffraction method. The method is based on the registering of the diffraction signal from a special periodic structure with high time and spatial resolution. This periodic structure is formed using special regimes of implantation of phosphorus and silicon ions in monocrystalline silicon with different fluencies.
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Yakh'ya V. Fattakhov, Mansur F. Galyautdinov, Tat'yana N. L'vova, M. V. Zakharov, Il'dus B. Khaibullin, "Investigation of the dynamics of recrystallization and melting of the surface of implanted silicon at rapid thermal processing", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557275; https://doi.org/10.1117/12.557275
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