28 May 2004 Ion beam synthesis of cobalt silicides in Si and SiGe
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557272
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Cobalt silicide layers were formed in Si and Si1-xGex/Si heterostructures by using ion beam synthesis (IBS) at specified regimes and conditions. Effect of the type of the initial target and its temperature during implantation on the phase composition and structure of synthesized layers were investigated. The nonmonotonic dependence of the sheet resistance of synthesized films on ion current density was detected. Thin CoSi2 films on Si0.6Ge0.4 structures with the sheet resistance of 17 Ohm/ were obtained using IBS with subsequent rapid thermal annealing.
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G. G. Gumarov, G. G. Gumarov, V. Yu. Petukhov, V. Yu. Petukhov, V. A. Shustov, V. A. Shustov, Oleg P. Pchelyakov, Oleg P. Pchelyakov, V. I. Mashanov, V. I. Mashanov, Il'dus B. Khaibullin, Il'dus B. Khaibullin, "Ion beam synthesis of cobalt silicides in Si and SiGe", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557272; https://doi.org/10.1117/12.557272

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