28 May 2004 Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557301
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
The limitations attributed to SIMOX material synthesized with using of an ion implantation of oxygen are surveyed. A new theoretical approach on the base of the phase transitions theory of Ginsburg - Landau is advanced. It is shown that a basic improving of any variants of SIMOX process cannot be achieved by virtue of the fundamental physical reasons. A method of the ion synthesis of buried layers of silica-based glasses is offered. The results of simulation of formation of the buried glass-contained layer in the silicon substrate are represented. The method allows one to maintain the basic advantages of SIMOX process and to overcome some serious limitations inherent to the latter. On the base of this method a new approach to creating of MOS transistor for SOI/MOS logic gates is offered.
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Sergey A. Krivelevich, Yuri. I. Denisenko, Andrey A. Tsyrulev, "Ionic synthesis of silica-based glasses: prospect, simulation and applied aspects", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557301; https://doi.org/10.1117/12.557301
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