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28 May 2004 Local optical diagnostics of nanostructures: SNOM investigation of the electromagnetic field interaction with the nanostructures
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562699
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Experimental and calculated results of the investigation of electromagnetic field distribution including its polarization characteristics in the vicinity of the nanostructures are presented. Experimental investigation was realized by aperture type scanning near field optical microscopes (SNOM) which operated in collection mode and provided both high spatial resolution and large scanning range. Shear force detection was used for the control of aperture to surface gap. Normal resolution which allows resolving 0.3 nm height surface steps was demonstrated for this gap control system. Theoretical computation of electromagnetic field distribution was realized by finite-difference time-domain (FDTD) method. Experimental three-dimensional maps of intensity and polarization distribution as result of light diffraction at nanoaperture in metal screen, dielectric and metallized nanocylinders were obtained. The qualitative difference between the orthogonal polarized component distributions near nanoaperture in aluminium screen was experimentally shown. The electromagnetic field concentration in the proximity of the dielectric nanocylinders was observed. This observation gives good fit with the results of FDTD computations. Spiral type electromagnetic field distribution pattern was experimentally observed in the proximity of metallized nanocylinders, which is unexpected from both experimental and theoretical points of view.
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Maxim V. Bashevoy, Alexander A. Ezhov, Sergey A. Magnitskii, Dmitry A. Muzychenko, Vladimir I. Panov, and Jarkyn S. Toursynov "Local optical diagnostics of nanostructures: SNOM investigation of the electromagnetic field interaction with the nanostructures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562699
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