28 May 2004 Modeling atomic hydrogen diffusion in GaAs
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562666
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
The hydrogen diffusion model in GaAs in conditions of an intense flow of penetrating atoms has been developed. It is shown that the formation undersurface diffusion barrier layer from immobile interstitial molecules of hydrogen reduce probability of atoms penetration into crystal and rate of their diffusion in GaAs, and influence on the process of shallow- and/or deep-centers passivation. It is exhibited that the influence of diffusion barrier should be taken into account at optimum mode selection of GaAs structure hydrogenation.
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Valerii A. Kagadei, Valerii A. Kagadei, E. Nefyodtsev, E. Nefyodtsev, "Modeling atomic hydrogen diffusion in GaAs", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562666; https://doi.org/10.1117/12.562666


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