Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films

A. V. Khomich; V. I. Kovalev; A. S. Vedeneev; A. G. Kazanskii; P. A. Forsh; Deyan He; X. Q. Wang; H. Mell; I. I. Vlasov; E. V. Zavedeev

doi:10.1117/12.557905

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28 May 2004 Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films

A. V. Khomich, V. I. Kovalev, A. S. Vedeneev, A. G. Kazanskii, P. A. Forsh, Deyan He, X. Q. Wang, H. Mell, I. I. Vlasov, E. V. Zavedeev

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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557905
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Raman and optical spectroscopy, conductivity and steady-state photoconductivity measurements, spectroscopic ellipsometry and atomic force microscopy (AFM) techniques were used to determine the properties of microcrystalline (μc-Si:H) and amorphous (a-Si:H) hydrogenated silicon films deposited at low temperatures by a conventional plasma-enhanced chemical vapour deposition (PECVD) reactors from silane-hydrogen mixtures. In order to gain insight into the mechanisms of transport and recombination in μc-Si:H films we study effect of isochronal annealing at 300-600° C on their properties.

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A. V. Khomich, V. I. Kovalev, A. S. Vedeneev, A. G. Kazanskii, P. A. Forsh, Deyan He, X. Q. Wang, H. Mell, I. I. Vlasov, and E. V. Zavedeev "Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557905

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