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28 May 2004 Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557905
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Raman and optical spectroscopy, conductivity and steady-state photoconductivity measurements, spectroscopic ellipsometry and atomic force microscopy (AFM) techniques were used to determine the properties of microcrystalline (μc-Si:H) and amorphous (a-Si:H) hydrogenated silicon films deposited at low temperatures by a conventional plasma-enhanced chemical vapour deposition (PECVD) reactors from silane-hydrogen mixtures. In order to gain insight into the mechanisms of transport and recombination in μc-Si:H films we study effect of isochronal annealing at 300-600° C on their properties.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Khomich, V. I. Kovalev, A. S. Vedeneev, A. G. Kazanskii, P. A. Forsh, Deyan He, X. Q. Wang, H. Mell, I. I. Vlasov, and E. V. Zavedeev "Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557905
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