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28 May 2004 Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557297
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Investigations of the Ti-Co, Ti-Ni and Ta-Ni thin films produced by magnetron co-sputtering and electron beam co-evaporation on Si substrates heated to 700-800° in nitrogen ambient with and without buffer layers are described. The TEM data show clear phase separation of TaN and NiSi2 for the Ta-Ni film deposited in a high N2 pressure ambient. Deposition at lower N2 pressure led to the formation of a mixed Ni-Ta-Si layer. The phase separation effect was absent for Ni-Ti films at high N2 pressure. The presence of buffer layers strongly affected the surface diffusion reactions in the Co-Ti-Si system. Formation of Ti-(O) or CoSix amorphous layers at the Si surface prevented the interdiffusion of Si and Co, such that even pure Co or Co2Si layers could be formed.
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I. A. Horin, Alexander A. Orlikovsky, A. G. Vasiliev, and A. L. Vasiliev "Phases transformation in Ti(Ta)-Ni(Co)-Si-N systems", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557297
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