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28 May 2004 Polycrystalline silicon for semiconductor devices
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557920
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
The optical properties of polycrystalline silicon films with oxygen incorporation in grain boundary were experimentally studied. The Raman scattering photoluminescent and Fourier-transformed infrared spectra were measured. The morphology of the films were studied by atomic force microscopy. The strong correlation between the oxygen content and optical properties, and polarization was found. The oxygen diffuse incorporation corresponds the energetic levels in band gap around Ec-0.27 eV. The thermal annealing of polycrystalline film by the temperature more than 150° C produces the siloxane bonding with defect level in energy diagram near Ec-0.14 eV. The quantum beats of intensity of optical and electronic signal due to the quantum interference of closed electronic states was studied.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitri E. Milovzorov "Polycrystalline silicon for semiconductor devices", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557920
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