28 May 2004 Possibility of silicon on insulator structure production using wet surface treatment (chemical assembling) and smart technique
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557441
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
The proposed lower methods of silicon surface formation using heat treatment in wet environment (including chemical surface assembling by the molecular deposition method) and the smart technique allow producing high-quality SOI-structures suitable for using in special ICs, semiconductor devices, micromechanical systems and sensors. The basic idea of the chemical surface assembling by the molecular deposition method that may be suitable for precision “synthesis of surface” of required composition and for surface modification consist in consecutive deposition of monolayers of structural units with given chemical composition.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. P. Prokop'ev, E. P. Prokop'ev, S. P. Timoshenkov, S. P. Timoshenkov, V. V. Kalugin, V. V. Kalugin, V. I. Grafutin, V. I. Grafutin, } "Possibility of silicon on insulator structure production using wet surface treatment (chemical assembling) and smart technique", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557441; https://doi.org/10.1117/12.557441
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