Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment

E. Anishchenko; V. Diamant; Valerii A. Kagadei; E. Nefeyodtsev; Konstantin V. Oskomov; Dmitry I. Proskurovsky; S. Romanenko

doi:10.1117/12.557263

28 May 2004 Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment

E. Anishchenko, V. Diamant, Valerii A. Kagadei, E. Nefeyodtsev, Konstantin V. Oskomov, Dmitry I. Proskurovsky, S. Romanenko

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557263
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Residual resist removal availability from surface of semiconductor structures Si and GaAs by directed hydrogen atomic flow has been shown. The influence of treatment time and temperature on surface cleaning efficiency was studied. It has been shown that cleaning by atomic hydrogen flow leads to surface of GaAs roughness reduction. Comparative studies of residual photoresist removal efficiency by oxygen plasma, ozone and atomic hydrogen have been carried out. Organic contaminants removal efficiency by atomic hydrogen is comparable to the efficiency of traditionally used cleaning method by oxygen plasma. The merits of treatment by AH flow are compatibility of the process with technology of low-k dielectrics, absence of surface oxidation of semiconductor materials, and minimization of energy and charged particles effect on semiconductor structure.

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E. Anishchenko, V. Diamant, Valerii A. Kagadei, E. Nefeyodtsev, Konstantin V. Oskomov, Dmitry I. Proskurovsky, and S. Romanenko "Residual photoresist removal from Si and GaAs surface atomic hydrogen flow treatment", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557263

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