28 May 2004 Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562731
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
The room temperature photoreflectance (PR) investigation of optical transitions in Al0.2Ga0.8As/GaAs/Al0.2Ga0.8As single and coupled quantum wells is presented. The structures were grown by molecular beam epitaxy for different barrier thickness and quantum well width. Three kinds of spectral features were observed in PR spectra: sharp line connected with GaAs band gap (1.42 eV), Frantz-Keldysh oscillations near Al0.2Ga0.8As band gap (1.71 eV) and features originated from electron-hole transitions in quantum well. The energies of observed transitions have been compared with the results of envelope function calculations.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lev P. Avakyants, Pavel Y. Bokov, Anatoly V. Chervyakov, Galib B. Galiev, Evgeny A. Klimov, "Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562731; https://doi.org/10.1117/12.562731
PROCEEDINGS
8 PAGES


SHARE
Back to Top