28 May 2004 Simulation of technological process of microstructures etching in high-voltage gas discharge plasma
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562655
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
This paper suggests using directed flows of low-temperature plasma formed by high-voltage gas discharge to obtain micro and nanostructures on substrate surface. The algorithm and software have been developed which make it possible to automate the process of calculating optimal values of the process parameters by etching microstructures in high-voltage gas discharge plasma. The difference between the experimental results and design data obtained as a result of simulation amounted to less than 10 per cent when investigating the following materials: silicon, silicon dioxide, silicon carbide, diamond films.
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Nikolay L. Kazanskiy, Vsevolod A. Kolpakov, "Simulation of technological process of microstructures etching in high-voltage gas discharge plasma", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562655; https://doi.org/10.1117/12.562655
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