28 May 2004 Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562710
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Structural characteristics of semiconducting heterostructures AlGaAs/GaAs/AlGaAs containing either single quantum well or two quantum wells separated with a thin AlAs layer are estimated by means of the double-crystal X-ray diffractometry. It is found that an additional Si-doping of outer barrier layers results in the formation of abrupt (less than 2 nm) interfaces at quantum wells.
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Andrei A. Lomov, Andrei A. Lomov, Mikhail A. Chuev, Mikhail A. Chuev, Galib B. Galiev, Galib B. Galiev, } "Structural characterization of undoped and Si-doped AlGaAs/GaAs double quantum wells separated by a thin AlAs layer", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562710; https://doi.org/10.1117/12.562710
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