28 May 2004 Structural diagnostics of quantum layers by x-ray diffraction and standing waves
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562668
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
We analyze the possibility for simultaneous adequate treatment of angular dependencies of the X-ray diffraction reflectivity and photoelectron yield (X-ray standing waves method) in order to extract the structural characteristics of semiconducting materials with ultra fine inclusions. Facilities of such an approach for evaluation of the degree of structural perfection of the layers, the phase shift of upper layers with respect to the buffer, the lattice parameters of particular layers and interfaces between them are demonstrated within the analysis of heterostructures based on the Si matrix with the Si1-xGex quantum wells and on the GaAs matrix with the InAs quantum dots.
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M. A. Chuev, M. A. Chuev, A. M. Afanas'ev, A. M. Afanas'ev, Rafik M. Imamov, Rafik M. Imamov, E. Kh. Mukhamedzhanov, E. Kh. Mukhamedzhanov, E. M. Pashaev, E. M. Pashaev, S. N. Yakunin, S. N. Yakunin, } "Structural diagnostics of quantum layers by x-ray diffraction and standing waves", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562668; https://doi.org/10.1117/12.562668
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