28 May 2004 The influence of classical and quantum-mechanical regions interaction on IV-characteristics of RTD based on different materials
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562647
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
The effect of influence of different material parameters and structure design on IV-characteristic of RTD is considered in the paper. Special attention was paid to analysis of the interaction between classical and quantum-mechanical RTD regions. The combined numerical model of a resonant-tunneling diode, based on self-consistent solution of the Schroedinger and Poisson equations is presented. The interface charge was added to the Poisson equation and its approximation is also given. The simulation of IV-characteristics of RTD on In0.53Ga0.47As/AlAs and GaAs/AlAs was carried out by using the combined model and model modifications. As a confirmation of accuracy and adequacy of the proposed model there was achieved a good agreement between theoretical and experimental results. The effect of interface charge and sizes of the active regions on IV-characteristics of RTDs was also studied.
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I. I. Abramov, Igor A. Goncharenko, N. V. Kolomejtseva, "The influence of classical and quantum-mechanical regions interaction on IV-characteristics of RTD based on different materials", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562647; https://doi.org/10.1117/12.562647
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