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28 May 2004 The scanning single ion implanter for solid state quantum computer
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004)
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
The scanning (step-and-repeat) and projective (simultaneous) methods of ion-optical implantations of single phosphorus 31P ions in hetero-structure Si/SixGe1-x are offered and analyzed with the purpose of formation of qubits of the solid-state quantum computer. Opportunities axial-symmetric electromagnetic objective lenses and existing sources of highly charged ions with reference to the given problem are considered. It is shown, that combined axial-symmetric electromagnetic lenses have advantage in comparison with electrostatic lenses. The combined electromagnetic objective having record small axial aberrations is designed. The optical scheme of scanning single ion implanter with such objective is offered. The critical parameters determining productivity of ion-optical implanter are allocated. They are the allowable lateral discrepancy of localization of implanted ions, a chromatic aberration of an objective, brightness of an ion source and the multiplicity of a charge of doped ions. The formula connecting these values is deduced. Requirements to sources of highly charged ions and the offer on search of new sources of highly charged ions and projective ion-optical schemes of single ion implantation are formulated.
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Valery A. Zhukov "The scanning single ion implanter for solid state quantum computer", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004);

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