The vortex mask design for irregular arrays of contact holes

P. G. Serafimovich; P. S. Ahn; J. K. Shin

doi:10.1117/12.556988

28 May 2004 The vortex mask design for irregular arrays of contact holes

P. G. Serafimovich, P. S. Ahn, J. K. Shin

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.556988
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The formation of contact holes in semiconductor integrated circuit device fabrication is considered. The contact holes size usually corresponds to the resolution of the stepper. The vortex mask technique is intended to improve resolution in patterning contact holes through exposure. By adopting this technique, an isolated contact hole with a diameter of approximately 80 nm and 250 nm pitch can be formed with KrF, NA=0.63. The conventional vortex mask approach permits the single exposure printing of regular arrays of contact holes. The unwanted contact holes should be erased from resist pattern by exposing the wafer with a second, conventional trim mask. The double exposure process makes the fabrication more expensive. In the present work the vortex mask for single exposure printing of irregular arrays of contact holes is suggested.

Citation Download Citation

P. G. Serafimovich, P. S. Ahn, and J. K. Shin "The vortex mask design for irregular arrays of contact holes", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.556988

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