28 May 2004 Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557928
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
A gradual transition from quasi-hexagonal to quasi-one dimensional pore distribution during deep anodic etching of a uniaxially stressed silicon plate was experimentally observed to increase with mechanical loading.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Starkov, V. V. Starkov, Eugene Yu. Gavrilin, Eugene Yu. Gavrilin, Anatoli F. Vyatkin, Anatoli F. Vyatkin, Vladimir I. Emel'yanov, Vladimir I. Emel'yanov, K. Eremin, K. Eremin, } "Transition from quasi-hexagonal to quasi-one dimensional pores distribution during deep anodic etching of uniaxial stressed silicon plate", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557928; https://doi.org/10.1117/12.557928
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