28 May 2004 X-ray diagnostics of heterostructures with quantum dots
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562700
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
GaAs-based heterostructures containing the layers with InAs quantum dots were studied by high-resolution X-ray diffraction and reflectivity measurements. Their structural parameters were derived by theoretical analysis of the measured data. The parameters derived from the diffraction and reflectivity measurements agree well with one another, which indicates that structural data yielded by the combination of such measurements can well be deemed plausible.
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S. N. Yakunin, E. M. Pashaev, A. A. Zaitsev, A. G. Sutyrin, V. G. Mokerov, "X-ray diagnostics of heterostructures with quantum dots", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562700; https://doi.org/10.1117/12.562700

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