Advanced large-format InSb IR FPA maturation at CMC Electronics

Rich Rawe; A. Timlin; Mike Davis; John W. Devitt; Mark Greiner

doi:10.1117/12.542699

30 August 2004 Advanced large-format InSb IR FPA maturation at CMC Electronics

Rich Rawe, A. Timlin, Mike Davis, John W. Devitt, Mark Greiner

Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004) https://doi.org/10.1117/12.542699
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

CMC Electronics Cincinnati (CMC) is now in production on 1Kx1K InSb focal plane arrays (FPAs), and continuing efforts on a third production run of 2Kx2K large format IR FPAs. These FPAs are based on our unique reticulated InSb architecture which has been shown to be inherently scalable across format size without losing performance properties. Current offerings range from 256x256 to 2Kx2K formats ranging in between 30um and 20um pixel pitch, with 15um pixel pitch FPAs in development. Performance in the 10mk to 15mk NETD range will be shown. The design and fabrication of these advanced FPAs has challenged the state of the art in fabrication processing of both InSb detectors and silicon ROICs. Improvements made to enable large format fabrication have improved the yields and lowered the cost of smaller format FPAs as well. Program sponsored manufacturing improvement activities, as well as CMC internal R&D, continue to improve both the yields and the performance characteristics of these large arrays. This has resulted in breakthroughs in FPA size, performance, reliability and yeilds. The latest yield, operability, and performance data will be shown. Data will be drawn from a population of approximately 30 2K FPAs and 50 1K FPAs. Recent developments in smaller pixel pitch and other R&D areas will be discussed.

Citation Download Citation

Rich Rawe, A. Timlin, Mike Davis, John W. Devitt, and Mark Greiner "Advanced large-format InSb IR FPA maturation at CMC Electronics", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.542699

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