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30 August 2004 Characterization of InGaSb detectors for 1.0- to 2.4-μm applications
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Near infrared detectors in the 1 to 2.4 μm spectral range are important for many applications such as atmospheric remote sensing, where several species have strong absorption spectra in that range. Antimonide-based III-V compound semiconductor materials are good candidates for developing detectors in that spectral range. Electrical and optical characteristics of In1-xGaxSb p-n photodetectors at different temperatures are presented. The devices were fabricated either on bulk InGaSb substrates by zinc diffusion or InGaSb epitaxial layers grown on GaSb substrates by organo-metallic vapor phase epitaxy (OMVPE). Variable area devices were fabricated. Current-voltage measurements indicated higher dark current in InGaSb devices grown on GaSb substrate, due to defects generated by the lattice-mismatch. Spectral response measurements were obtained in the 1 to 2.4 μm wavelength range at different temperatures. At room temperature, the cut-off wavelengths were observed at 2.3 and 2.1 μm for InGaSb devices grown on GaSb and for devices fabricated on bulk InGaSb substrates respectively. Reducing the operating temperature shifts the cut-off wavelength to shorter values and increases the responsivity. Noise calculations indicated a room temperature detectivities of 3.3x1010 and 5.5x1010 cmHz1/2/W at 2 μm for the GaSb and InGaSb respectively. Detectivity variation with wavelength will be presented and compared to the background limited performance.
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Tamer F. Refaat, M. Nurul Abedin, Upendra N. Singh, Vinay Bhagwat, Ishwara B. Bhat, and Partha S Dutta "Characterization of InGaSb detectors for 1.0- to 2.4-μm applications", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004);

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