30 August 2004 Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range
Author Affiliations +
Abstract
An attempt is made to connect the material parameters of Hg1-xCdxTe layer growth to the parameters measured following photovoltaic detector fabrication. We found that the Cd composition X value extracted from spectral response measurements on detectors at 78 K are lower than the X values obtained from the room temperature transmission measurements, or the X value used to fit the measured material minority carrier lifetime versus temperature data. The lateral collection length Lc that determines the thermally generated carriers that contribute to the diffusion current and Lopt extracted from the "flood-illuminated" to "focused-spot" photocurrent ratio are in excellent agreement. Devices exhibit near theoretical RoA uniformity at 77K for MWIR, LWIR and VLWIR. RoAopt was also found to be uniform throughout the range of detector dimensions measured such as 8 μm diameter circular to 250 μm x 250 μm square. Median RoAopt values are 1266, 66 and 0.75 ohm-cm2 for the 9.7, 11.3 and 15.4 μm cutoff wavelengths respectively. The uniformity in RoAopt confirms that the detector performance is limited by the bulk properties of the material, and not by surface effects.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Priyalal S. Wijewarnasuriya, Nibir K. Dhar, Arvind I. D'Souza, Maryn G. Stapelbroek, Dennis D. Edwall, Jose M. Arias, and Jagmohan Bajaj "Device analysis of MBE HgCdTe p-on-n photovoltaic detectors in 5- to 15-μm wavelength range", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.540997; https://doi.org/10.1117/12.540997
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top