30 August 2004 High-performance 2D MWIR Hg1-xCdxTe array operating at 220K
Author Affiliations +
Infrared detectors based on Hg1-xCdxTe and grown by the MOVPE process can be designed to have very low dark currents, even for temperatures above 200K. These low dark currents are compatible with achieving background-limited performance at a temperature of 200K in f/2. However, in practice the detectors suffer from high 1/f noise. In this paper, a novel approach is explored in which most of the low frequency noise can be eliminated by operating the arrays at near zero bias. Using this technique, imaging arrays have been demonstrated at temperatures up to 220K giving a NETD of around 60mK in f/2.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neil T. Gordon, Neil T. Gordon, Chris L. Jones, Chris L. Jones, David J. Lees, David J. Lees, Chris D. Maxey, Chris D. Maxey, Tim S. Phillips, Tim S. Phillips, Les G. Hipwood, Les G. Hipwood, Paul C. Haynes, Paul C. Haynes, Rose A. Catchpole, Rose A. Catchpole, } "High-performance 2D MWIR Hg1-xCdxTe array operating at 220K", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.544485; https://doi.org/10.1117/12.544485


As-doping HgCdTe by MBE
Proceedings of SPIE (January 10 2005)
Activation of arsenic in epitaxial Hg1–xCdxTe (MCT)
Proceedings of SPIE (September 07 2006)

Back to Top