30 August 2004 InP-based multiwavelength QWIP technology
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This paper describes the design, growth and fabrication characterization of novel multi-wavelength QWIP wafers based on InP material systems. We designed, grew, fabricated and characterized AlGaInAs/GaInAs QWIPs suitable for operation at 3-5 μm, and 8-12 μm spectral range. We fabricated mid-wave IR 320 x 250 focal plane arrays, hybridized them with Si -readout circuits and performed radiometric and imaging tests. Excellent imaging results of the mid-wave IR focal plane arrays with an operability of 88% and mean NEDT of 0.09K have been achieved. To our knowledge, this is the first imaging with InP based QWIPs focal plane array.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ayub M Fathimulla, Ayub M Fathimulla, Harry Hier, Harry Hier, Leye Aina, Leye Aina, Terrance Worchesky, Terrance Worchesky, Parvez Uppal, Parvez Uppal, "InP-based multiwavelength QWIP technology", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.542366; https://doi.org/10.1117/12.542366


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