30 August 2004 LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates
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Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004); doi: 10.1117/12.541606
Event: Defense and Security, 2004, Orlando, Florida, United States
Abstract
At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSexTe1-x/Si(211) is being investigated as an alternative substrate to Bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect densities less than 400 cm-2 and full width at half maximum as low as 100 arcsec with excellent uniformity over 3 inch area. LWIR HgCdTe on CdTe/Si substrates have also been grown and characterized with optical, x-ray diffraction, etch pit etching and Hall effect measurements. Photo Voltaic devices fabricated on these LWIR material shows G-R limited performance at 78K indicating detector performance is not limited by the bulk properties of the grown material.
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Priyalal S. Wijewarnasuriya, Gregory Brill, Y. P. Chen, Nibir K. Dhar, Silviu Velicu, "LWIR MBE HgCdTe photovoltaic detectors grown on Si composite substrates", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.541606; https://doi.org/10.1117/12.541606
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KEYWORDS
Mercury cadmium telluride

Long wavelength infrared

Composites

X-rays

Silicon

Selenium

Sensors

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