30 August 2004 Range-gated imaging with an indium-gallium-arsenide-based focal plane array
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Abstract
Range-gated imaging using indium gallium arsenide based focal plane arrays enables both depth and intensity imaging with eye-safe lasers while remaining covert to night vision goggles. We report on a focal plane array consisting of an indium gallium arsenide photodiode array hybrid-integrated with a CMOS readout circuit, resulting in an all solid state device. A 5 V supply avoids the complication of high voltage supplies and improves reliability, while also allowing the device to be small and lightweight. The spectral sensitivity of InGaAs extends from 0.9 microns to 1.7 microns, allowing the use of commercially available pulsed lasers with 1.5 micron wavelength, several millijoule pulse energies, and nanosecond scale pulse durations. SUI is developing a 320 x 256 pixel imager with the ability to conduct range gated imaging with sub-100 ns gates, while also allowing a 16 ms integration time for imaging in a staring mode. The pixels are fabricated on a 25 micron pitch for a compact device, and all pixels are gated simultaneously for “snapshot” exposure. High in-pixel gain with nearly noiseless amplification and low dark current enable high sensitivity imaging from ultra-short gates to video rate imaging.
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Robert M. Brubaker, Robert M. Brubaker, Martin H. Ettenberg, Martin H. Ettenberg, Matthew T. O'Grady, Matthew T. O'Grady, Michael A. Blessinger, Michael A. Blessinger, J. Christopher Dries, J. Christopher Dries, } "Range-gated imaging with an indium-gallium-arsenide-based focal plane array", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); doi: 10.1117/12.542508; https://doi.org/10.1117/12.542508
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