Third-generation infrared detector program at SCD

Philip Klipstein; Zipora Calahorra; Ami Zemel; Rafi Gatt; Eli Harush; Eli Jacobsohn; Olga Klin; Michael Yassen; Joelle Oiknine-Schlesinger; Eliezer Weiss; Salomon Risemberg

doi:10.1117/12.548413

30 August 2004 Third-generation infrared detector program at SCD

Philip Klipstein, Zipora Calahorra, Ami Zemel, Rafi Gatt, Eli Harush, Eli Jacobsohn, Olga Klin, Michael Yassen, Joelle Oiknine-Schlesinger, Eliezer Weiss, Salomon Risemberg

Author Affiliations +

Proceedings Volume 5406, Infrared Technology and Applications XXX; (2004) https://doi.org/10.1117/12.548413
Event: Defense and Security, 2004, Orlando, Florida, United States

Abstract

Antimonide Based Compound Semiconductors (ABCS) and a new family of advanced analogue and digital silicon read-out integrated circuits form the basis of the SCD 3^rd generation detector program, which builds on the firm platform of SCDs existing InSb-FPA technology. In order to cover the MWIR atmospheric window, we recently proposed the epitaxial alloys: InAs_1-y Sb_y on GaSb with 0.07 < y < 0.11 and In_1-zAl_z Sb on InSb with 0 < z < 0.03. In this paper we focus on the results of some of our recent work on epitaxial In_1-zAl_z Sb grown on InSb by Molecular Beam Epitxay (MBE). In epitaxial InSb (_z = 0), we demonstrate the performance of Focal Plane Arrays (FPAs) with a format of 320x256 pixels, at focal plane temperatures between 77K and 100K. An operability has been achieved which is in excess of 99.5%, with a Residual Non-Uniformity (RNU) at 95K of less than 0.03% (standard deviation/dynamic range). Moreover, after a two point Non-Uniformity Correction (NUC) has been applied at 95K, the RNU remains below ~0.1% at all focal plane temperatures down to 85K and up to 100K without the need to apply any further correction. This is a major improvement in both the temperature of operation and the temperature stability compared with implanted diodes made from bulk material. We also demonstrate rapid progress in the development of low current epitaxial InAlSb photodiodes with high uniformity and low dark current that offer a range of cut-off wavelengths shorter than in InSb. Preliminary results are presented on FPAs with a cut-off wavelength in the range λ_C~5μ.

Citation Download Citation

Philip Klipstein, Zipora Calahorra, Ami Zemel, Rafi Gatt, Eli Harush, Eli Jacobsohn, Olga Klin, Michael Yassen, Joelle Oiknine-Schlesinger, Eliezer Weiss, and Salomon Risemberg "Third-generation infrared detector program at SCD", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.548413

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available