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30 August 2004 Visible response of λc=2.5µm HgCdTe HDVIP detectors
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Abstract
Cu-doped HDVIP detectors with different cut-off wavelengths are routinely manufactured. The DRS HDVIP detector technology is a front-side-illuminated detector technology. There is no substrate to absorb the visible photons as in backside-illuminated detectors and these detectors should be well suited to respond to visible light. However, HDVIP detectors are passivated using CdTe that absorbs the visible light photons. CdTe strongly absorbs photons of wavelength shorter than about 800 nm. Detectors with varying thickness of CdTe passivation layers were fabricated to investigate the visible response of the 2.5-μm-cutoff detectors. A model was developed to predict the quantum efficiency of the detectors in the near infrared and visible wavelength regions as a function of CdTe thickness. Individual photodiodes (λc = 2.5 μm) in test bars were examined. Measurements of the quantum efficiency as a function of wavelength region will be presented and compared to the model predictions.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maryn G. Stapelbroek, Matthew Guptill, Arvind I. D'Souza, Elizabeth R. Bryan, J. D. Beck, M. A. Kinch, and James E. Robinson "Visible response of λc=2.5µm HgCdTe HDVIP detectors", Proc. SPIE 5406, Infrared Technology and Applications XXX, (30 August 2004); https://doi.org/10.1117/12.547185
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