24 October 1985 GaAs IMPATT Sources
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Proceedings Volume 0544, Millimeter Wave Technology III; (1985) https://doi.org/10.1117/12.948243
Event: 1985 Technical Symposium East, 1985, Arlington, United States
Abstract
Amplifiers and oscillators, using one or more gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained on devices developed in our laboratory. Our approaches to diode modeling and circuit optimization are outlined.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Masse, D. Masse, M. G. Adlerstein, M. G. Adlerstein, L. H. Holway, L. H. Holway, } "GaAs IMPATT Sources", Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); doi: 10.1117/12.948243; https://doi.org/10.1117/12.948243
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