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24 October 1985 GaAs IMPATT Sources
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Proceedings Volume 0544, Millimeter Wave Technology III; (1985)
Event: 1985 Technical Symposium East, 1985, Arlington, United States
Amplifiers and oscillators, using one or more gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained on devices developed in our laboratory. Our approaches to diode modeling and circuit optimization are outlined.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Masse, M. G. Adlerstein, and L. H. Holway Jr. "GaAs IMPATT Sources", Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985);


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