InP Gunn Diode Sources

Berin Fank; James Crowley; Connie Hang

doi:10.1117/12.948244

24 October 1985 InP Gunn Diode Sources

Berin Fank, James Crowley, Connie Hang

Proceedings Volume 0544, Millimeter Wave Technology III; (1985) https://doi.org/10.1117/12.948244
Event: 1985 Technical Symposium East, 1985, Arlington, United States

Abstract

The development of InP Gunn devices has progressed to manufacturing status for several basic products. Designs and processes have been established for InP Gunn oscillator diodes operating at 56 GHz, 80 GHz, and 94 GHz. This work has concentrated on designs especially for high cw efficiency at medium power levels suitable for short and medium range trans-mitters. At 56 GHz, cw efficiencies between 5% and 10% are readily obtainable, at 80 GHz efficiencies are 3.5% to 6.0% and at 94 GHz cw efficiencies range from 2.5% to 5%. Typical power levels are 250 mw at 56 GHz, 75 mw at 80 GHz, and 60 mw at 94 GHz. These performance characteristics are obtainable over standard temperature ranges (e.g., -40°C to +60°C HST). These InP Gunn devices are now being used in a variety of oscillator circuits and modified device designs are being used as well in stable, medium power, high efficiency amplifiers.

Citation Download Citation

Berin Fank, James Crowley, and Connie Hang "InP Gunn Diode Sources", Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); https://doi.org/10.1117/12.948244

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