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7 April 2004 Measurement and modeling of high-performance lateral p-i-n photodetectors
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.558399
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Abstract
Laterial p-i-n photodiodes have been produced in a standard, unmodified commercial GaAs integrated circuit process (Vitesse Semiconductor Inc. HGaAs IV and V). The devices were modelled using the MEDICI simulation package, achieving a very good fit to both capacitance and DC light response measuremnts. The simulation recreated an interesting feature of the devices, wherein the detectors go from a low-performance to high-performance regime abruptly at a specific reverse bias. An analysis of the simulated behavior of the depletion region in the nominally intrinsic region of the device provided a partial answer to the physics behind this bias point. A second generation of devices of different geometries was fabricated and tested. The newer fabrication process showed a lower performance transition (~0.6 V) than the previous process (~4 V) for an identical layout geometry. Preliminary high-speed measurements of the newer devices are quite encouraging.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. P. Giziewicz, Henry K.H. Choy, Clifton G. Fonstad Jr., and Sheila Prasad "Measurement and modeling of high-performance lateral p-i-n photodetectors", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); https://doi.org/10.1117/12.558399
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