7 April 2004 Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560661
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Integrated optoelectronic devices are expected to become a key component of the future microelectronic and communication technology. This has led to great interest in the development of silicon-based light emitters. One of the most promising techniques for fabricating such emitters uses ion-beam synthesis (IBS) to form semiconductor nanoclusters in a layer of thermally-grown silicon dioxide. Following the preparation of metal-oxide-semiconductor (MOS) structures incorporating nanocluster-rich oxide layers, blue-to-violet electroluminescence (EL) has been observed at room temperature (RT) for implants using germanium ions and heat treatments involving furnace and/or rapid thermal processing. The power efficiency of the EL is quite high, up to 5 x 10-3, making the blue/violet light emission visible with the naked eye. It has been proven that light emission is caused by one and the same luminescent center. The microstructure of the ion-implanted and annealed oxide layers has been characterized by cross-sectional transmission electron microscopy (XTEM). The presence of second-phase nanoclusters has been found to modify considerably the charge injection and charge transport in the oxide. The optical properties of the nanocluster-rich oxide layers have been correlated with the process of charge trapping using a combination of current-voltage (I/V) and capacitance-voltage (C/V) measurements. The results obtained have enabled the nature of the EL to be elucidated. Finally, opto- and microelectronic application aspects are outlined.
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Thoralf Gebel, Lars Rebohle, Rossen A. Yankov, Alexi N. Nazarov, Wolfgang Skorupa, "Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560661; https://doi.org/10.1117/12.560661

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