7 April 2004 Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping
Author Affiliations +
Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560661
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Integrated optoelectronic devices are expected to become a key component of the future microelectronic and communication technology. This has led to great interest in the development of silicon-based light emitters. One of the most promising techniques for fabricating such emitters uses ion-beam synthesis (IBS) to form semiconductor nanoclusters in a layer of thermally-grown silicon dioxide. Following the preparation of metal-oxide-semiconductor (MOS) structures incorporating nanocluster-rich oxide layers, blue-to-violet electroluminescence (EL) has been observed at room temperature (RT) for implants using germanium ions and heat treatments involving furnace and/or rapid thermal processing. The power efficiency of the EL is quite high, up to 5 x 10-3, making the blue/violet light emission visible with the naked eye. It has been proven that light emission is caused by one and the same luminescent center. The microstructure of the ion-implanted and annealed oxide layers has been characterized by cross-sectional transmission electron microscopy (XTEM). The presence of second-phase nanoclusters has been found to modify considerably the charge injection and charge transport in the oxide. The optical properties of the nanocluster-rich oxide layers have been correlated with the process of charge trapping using a combination of current-voltage (I/V) and capacitance-voltage (C/V) measurements. The results obtained have enabled the nature of the EL to be elucidated. Finally, opto- and microelectronic application aspects are outlined.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thoralf Gebel, Thoralf Gebel, Lars Rebohle, Lars Rebohle, Rossen A. Yankov, Rossen A. Yankov, Alexi N. Nazarov, Alexi N. Nazarov, Wolfgang Skorupa, Wolfgang Skorupa, } "Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560661; https://doi.org/10.1117/12.560661

Back to Top