7 April 2004 Optimization of InAlAs/InGaAs heterostructure, InP-based HEMT for its microwave frequency applications
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560678
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Abstract
In the present paper efforts have been made to optimize InAlAs/InGaAs/InP HEMT by enhancing the Vc-Voff using pulsed doped structure from uniformly doped to delta doped for its microwave frequency applications. Contours have been shown to predict the cause of enhanced performance of the device using delta doped in comparison to uniformly doped structure. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the device performance. The optimized value of Vc-Voff is then used to predict the transconductance and cut-off frequency of the device. From the analysis the maximum-transconductance of 1.41 S/mm for channel depth of 200 Å and a cut-off frequency of 627 GHz for channel depth of 300 Å can be achieved corresponding to gate length of 0.1 μm with breakdown voltage of 14.8 V.
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R. S. Gupta, R. S. Gupta, Ritesh Gupta, Ritesh Gupta, Mridula Gupta, Mridula Gupta, } "Optimization of InAlAs/InGaAs heterostructure, InP-based HEMT for its microwave frequency applications", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560678; https://doi.org/10.1117/12.560678
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