7 April 2004 Properties of erbium-doped gallium nitride films prepared by RF magnetron sputtering
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560666
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Abstract
We report on fabrication of the GaN layers deposited onto silicon, silica-on-silicon and quartz glass substrates by RF magnetron sputtering. The GaN layers were also doped with erbium ions to achieve active optical properties. The fabricated layers were characterized by a number of methods and the results are discussed on the bases of quality of the deposited GaN structures.
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Vaclav Prajzler, Ivan Huttel, Vratislav Perina, Josef Schrofel, Jarmila Spirkova, Jiri Oswald, Vaclav Studnicka, Miroslava Novotna, "Properties of erbium-doped gallium nitride films prepared by RF magnetron sputtering", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560666; https://doi.org/10.1117/12.560666
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