7 April 2004 Properties of erbium-doped gallium nitride films prepared by RF magnetron sputtering
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560666
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Abstract
We report on fabrication of the GaN layers deposited onto silicon, silica-on-silicon and quartz glass substrates by RF magnetron sputtering. The GaN layers were also doped with erbium ions to achieve active optical properties. The fabricated layers were characterized by a number of methods and the results are discussed on the bases of quality of the deposited GaN structures.
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Vaclav Prajzler, Vaclav Prajzler, Ivan Huttel, Ivan Huttel, Vratislav Perina, Vratislav Perina, Josef Schrofel, Josef Schrofel, Jarmila Spirkova, Jarmila Spirkova, Jiri Oswald, Jiri Oswald, Vaclav Studnicka, Vaclav Studnicka, Miroslava Novotna, Miroslava Novotna, } "Properties of erbium-doped gallium nitride films prepared by RF magnetron sputtering", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560666; https://doi.org/10.1117/12.560666
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