7 April 2004 Recent developement of terahertz wave generation
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560679
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
History and recent developments of terahertz devices utilizing lattice and molecular vibrations are presented. They are semiconductor Raman oscillator and amplifier, parametric generators of terahertz wave using polariton-phonons in dielectrics and semiconductors. We also present the recent advancements in the fabrication and performance of terahertz electronics devices: ISIT and ZTUNNETT diode. They are fabricated with molecular layer epitaxy (MLE), which is the most advanced nanotechnology having atomic accuracy.
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Jun-Ichi Nishizawa, Jun-Ichi Nishizawa, "Recent developement of terahertz wave generation", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560679; https://doi.org/10.1117/12.560679

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