7 April 2004 Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application
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Proceedings Volume 5445, Microwave and Optical Technology 2003; (2004) https://doi.org/10.1117/12.560662
Event: Microwave and Optical Technology 2003, 2003, Ostrava, Czech Republic
Abstract
This paper analyses the temperature dependence of device characteristics. The degradation of the device performance due to thermal stress has been explained in detail. The paper also includes a theoretical explanation to the significant temperature effects on transconductance and cut off frequency for microwave frequency application.
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Jyotika Jogi, Jyotika Jogi, Sujata Pandey, Sujata Pandey, R. S. Gupta, R. S. Gupta, } "Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application", Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560662; https://doi.org/10.1117/12.560662
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