20 August 2004 Alternating aperture phase shift mask process using e-beam lithography for the second level
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557719
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
The combination of conductive topcoat ESPACER Z300 and positive tone CAR FEP171 was investigated in detail for the second level patterning of Alternating Aperture Phase Shift Masks (AAPSM) using e-beam lithography. Chrome load variations between 2 and 50% with the corresponding deviation of the second level pattern, homogeneously and unevenly distributed on the mask, had no significant impact on placement and overlay accuracy. No clear defect increasing could be measured when applying ESPACER top coat. The quartz etch selectivity of FEP171 was identically with the widely accepted laser resist IP3600 and a good etch depth linearity was achieved down to 200nm feature size. Finally, the performance of the developed process has been demonstrated on a 65nm node device design.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Corinna Koepernik, Corinna Koepernik, Joerg Butschke, Joerg Butschke, Dirk Beyer, Dirk Beyer, Mathias Irmscher, Mathias Irmscher, Bernd Leibold, Bernd Leibold, Emmanuel Rausa, Emmanuel Rausa, Rainer Plontke, Rainer Plontke, Jason Plumhoff, Jason Plumhoff, Peter Voehringer, Peter Voehringer, } "Alternating aperture phase shift mask process using e-beam lithography for the second level", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557719; https://doi.org/10.1117/12.557719
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