Analysis of mask CD error by dose modulation for fogging effect

Hojune Lee; Seung-Hune Yang; Byung-Gook Kim; Sung-Yong Moon; Sung-Woon Choi; Hee-Sun Yoon; Woo-Sung Han

doi:10.1117/12.557713

20 August 2004 Analysis of mask CD error by dose modulation for fogging effect

Hojune Lee, Seung-Hune Yang, Byung-Gook Kim, Sung-Yong Moon, Sung-Woon Choi, Hee-Sun Yoon, Woo-Sung Han

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557713
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

Mask critical dimension (CD) errors are analyzed in case fogging effect is corrected by dose modulation method with comparison of measurement and simulation. In the test mask, an extreme condition from pattern density 0% to 100% is applied for making fogging effect. On the ground of the utmost pattern densities which is one of the factors of fogging effect, various mask CD errors are observed with optical measurement in spite of fogging correction. Each error factor is distinguished from whole mask error using electron beam simulator which is adopting Monte Carlo (MC) calculation for electron scattering modeling, proximity effect correction (PEC) and even fogging effect correction. From error analysis, 3 kinds of mask error are observed. The first CD error is from an inaccurate modeling of fogging effect, the second is from fogging correction program. The third is error from development loading effect. The two formers are comparatively less important than the latter because they can be soluble problems by careful selection of fogging model or improvement of computing systems. However, error from develop loading effect is hard to solve so that not only chemical but also fluid mechanical approach is needed.

Citation Download Citation

Hojune Lee, Seung-Hune Yang, Byung-Gook Kim, Sung-Yong Moon, Sung-Woon Choi, Hee-Sun Yoon, and Woo-Sung Han "Analysis of mask CD error by dose modulation for fogging effect", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557713

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available