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20 August 2004 Analysis of mask CD error by dose modulation for fogging effect
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004)
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Mask critical dimension (CD) errors are analyzed in case fogging effect is corrected by dose modulation method with comparison of measurement and simulation. In the test mask, an extreme condition from pattern density 0% to 100% is applied for making fogging effect. On the ground of the utmost pattern densities which is one of the factors of fogging effect, various mask CD errors are observed with optical measurement in spite of fogging correction. Each error factor is distinguished from whole mask error using electron beam simulator which is adopting Monte Carlo (MC) calculation for electron scattering modeling, proximity effect correction (PEC) and even fogging effect correction. From error analysis, 3 kinds of mask error are observed. The first CD error is from an inaccurate modeling of fogging effect, the second is from fogging correction program. The third is error from development loading effect. The two formers are comparatively less important than the latter because they can be soluble problems by careful selection of fogging model or improvement of computing systems. However, error from develop loading effect is hard to solve so that not only chemical but also fluid mechanical approach is needed.
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Hojune Lee, Seung-Hune Yang, Byung-Gook Kim, Sung-Yong Moon, Sung-Woon Choi, Hee-Sun Yoon, and Woo-Sung Han "Analysis of mask CD error by dose modulation for fogging effect", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004);

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