20 August 2004 Application of atomic force microscope to 65-nm node photomasks
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557763
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
The technology node of semiconductor device production is progressing to 65nm generation. For the 65nm photomasks, the target specifications of defect size and repair accuracy are 52nm and 7nm, respectively. Especially, real defects on photomasks are not only simple two-dimensional patterns but also three-dimensional shapes such as phase shift defects and contamination, thus we need to recognize defect shapes accurately. Additionally, AAPSM's Cr patterns overhang, and we have to measure defects on three-dimensional shapes. To evaluate them, we use an AFM metrology system, Dimension X3D (Veeco), having both precise CD measurement repeatability (2nm) and high resolution for defects. In this report, we show the performance of the AFM metrology system. First, we evaluated CD metrology performance, CD repeatbility about four type photomasks: NEGA-BIM, POSI-BIM, KrF-HT and ArF-HT, and all masks met specifications. Next, we evaluated defect pattern shapes and AAPSM and CPL mask patterns. Consequently, we have confirmed that the AFM metrology system has high performance for 65nm photomasks.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Tanaka, Yoshiyuki Tanaka, Yasutoshi Itou, Yasutoshi Itou, Nobuyuki Yoshioka, Nobuyuki Yoshioka, Katsuhiro Matsuyama, Katsuhiro Matsuyama, Dean J. Dawson, Dean J. Dawson, } "Application of atomic force microscope to 65-nm node photomasks", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557763; https://doi.org/10.1117/12.557763
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