CD uniformity improvement by loading effect correction (LEC) function for 90-nm reticle

Colbert Lu; Torey Huang; Shone Lee

doi:10.1117/12.562776

20 August 2004 CD uniformity improvement by loading effect correction (LEC) function for 90-nm reticle

Colbert Lu, Torey Huang, Shone Lee

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.562776
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

The etching loading effect is always a big issue for mask maker to get excellent critical dimension (CD) uniformity. For etching process, with different loading area density the etching rate is different and then micro-loading issue exists. In accordance with the shrinking of patterns on ultra-large scale integration (ULSI), higher CD accuracy on photomask is required. For the 130nm technology node, the SPEC of CD uniformity range is about 17 ~ 22nm. At common poly layer, the distribution of pattern density is from 50% ~ 90%. The CD variation with different pattern density is 15 ~ 20nm. Besides adjusting the etching recipe to minimize the loading effect, we provide another solution. With loading effect correction (LEC) function on HL-950M, it offers a software method to calculate the pattern density and produce a dosage map to compensate the CD variation which is resulted from etching loading.

Citation Download Citation

Colbert Lu, Torey Huang, and Shone Lee "CD uniformity improvement by loading effect correction (LEC) function for 90-nm reticle", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.562776

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