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20 August 2004 Chemical characteristics of negative-tone chemically amplified resist for advanced mask making
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557692
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
We investigated the film property and the lithographic performance of five commercialized NCARs. This report shows the relationship between chemical structure and EB lithographic performance, such as resolution, sensitivity and environmental stability. In this study, we found the good matching the matrix polymer, the cross linker and the photo acid generator(PAG) against NCARs issues. Furthermore, we could demonstrate the trade-off relation for lithographic factor and stabilized factor by chemical characteristics. This report suggests the strategy that was design of chemical structure for the next generation NCARs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazumasa Takeshi, Naoko Ito, Daisuke Inokuchi, Yasushi Nishiyama, Yuichi Fukushima, and Yasuhiro Okumoto "Chemical characteristics of negative-tone chemically amplified resist for advanced mask making", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557692
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