20 August 2004 Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing
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Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557721
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan
Abstract
In Embedded Attenuated PSMs(Phase Shift Masks), chrome residues on MoSiON, especially at the edge of a pattern, should be decreasing the phase-shift effect and it must be also causing CD(critical dimension) variations in a wafer-process. Chrome residues on MoSiON are well known being generated at second level lithography or according to performance of cleaning process before it. In this paper, we investgated the influence of treatment on Cr surface during MoSiON etch process using CF4 plasma and proposed the optimum treatment procedure to reduce the Cr residues originated form re-deposition of carbon-contained polymers in CF4 plasma.
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Yong-Dae Kim, Dae-Woo Kim, Dong-Seuk Lee, Pil-Jin Jang, Hyuk-Joo Kwon, Hyun-Jun Cho, Jin-Min Kim, Sang-Soo Choi, "Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557721; https://doi.org/10.1117/12.557721
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